Home Physics Semiconductor Electronics P -N Junction and Semiconductor Diode / Semiconductor Devices The cause of the potential barrier in a P-N …
Physics Semiconductor Electronics P -N Junction and Semiconductor Diode / Semiconductor Devices MCQ (Single Correct)

The cause of the potential barrier in a P-N diode is

A
Depletion of positive charges near the junction
B
Concentration of positive charges near the junction
C
Depletion of negative charges near the junction
D
Concentration of positive and negative charges near the junction

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Verified by Experts
The correct answer is:
D

The potential barrier in a P-N junction is formed due to the accumulation of immobile positive and negative ions near the junction.

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